Aeroflex Microelectronic Solutions

From GaAs to silicon. No one provides a more comprehensive approach to handling all your requests for standard and custom Schottkys, PINs, NIPs, varactors, detectors, limiters, capacitors, resistors, inductors, attenuator pads, and so much more. And they come delivered every way imaginable, from wafers to plastic surface mount.

Aeroflex Metelics Products

Low Cost Surface Mount Control Diodes
drop in perfectly

Click here to get copy of AD.Aeroflex / Metelics has your drop-in solutions for several low cost surface mount control components.

Medium and high power PIN diode SPST switch elements are excellent for test instrumentation, software defined radio, and wireless infrastructures such as TD-SCDMA, WiMAX, WiBro, WLAN, and MIMO OFDM.

High dynamic range shunt attenuator diodes are ideal for test instrumentation and wireless infrastructures such as TD-SCDMA, WiMAX, WiBro, WLAN, point-to-point radio, and FWA.

GaAs and silicon Schottky mixer/detector diodes are perfect for test instrumentation, sensors, and wireless infrastructures such as point-to-point radio and FWA.

  Feature Article, MPD 3-2010: Advances in Plastic Surface Mount Silicon and GaAs Schottky Diodes for High Frequency Detectors and Mixers, by James L. Godbout and Rockford C. Curby, Ph.D., Aeroflex / Metelics

  Application Note,  AN55131B:  Design of LOW COST High Performance 20W and 50W Transmit and Receive Antenna Switches

  Application Note, AN55132B:  Design of LOW COST High Isolation 20W and 50W Transmit and Receive Antenna Switches

S-Parameter Data: Click here to get winzip...

Medium and High Power PIN Diode SPST Switch Elements
Part
Number
 Rated
Power
Max		 Frequency
Maximum		 Insertion Loss
Typical		 Isolation
Typical		 Package*
1 GHz 2.5 GHz 1 GHz 2.5 GHz
MSWSE-050-10 50 1 0.15 – 10 – 0805P (SE)
MSWSE-044-10 40 2 0.20 0.25 15 8 0805P (SE)
MSWSHB-020-30 40 10 – 0.30 – 55 2012 (SH)
MSWSSB-020-30 20 10 0.20 0.20 70 55 2012 (SS)
MSWSS-020-40 20 6 0.15 0.30 63 50 2012 (SS)
MEST2G-150-20 80 10 0.20 0.25 26 19 CM26 (SE)
MEST2G-080-25 80 10 0.20 0.25 30 24 CM27 (SE)
MEST2G-020-15 20 6 0.20 0.20 25 18 2012 (SE)
MEST2G-010-20 10 10 0.40 0.40 31 23 2012 (SE)
MEST2GFC-10-25 10 40 0.20 0.20 30 26 Chip (SE)
MSWSE-010-15 10 2 0.25 0.25 18 9 0503 (SE)
MSWSE-005-15 5 6 0.30 0.60 24 17 0503 (SE)
*Configurations: series (SE), shunt (SH), and series shunt (SS)
High Dynamic Range Shunt Attenuator Diodes
Part Number
 Polarity Insertion
Loss dB
Typical		 Attenuation Value, dB typical Package
10 µA 100 µA 1 mA 10 mA 100 mA
MSAT-P25 PIN 0.3 0.4 0.8 5 17 27 2012
MSAT-N25 NIP 0.3 0.4 0.8 5 17 27 2012
• Low distortion vs. forward current, harmonic distortion at 85 dBc typical
• Broadband performance beyond 10 GHz
GaAs and Silicon Schottky Mixer/Detector Diodes
Part
Number
 Type Frequency Vbr
Min V		 Ct
Typical
pF		 Vf Rs
Max Ω		 Package
Min mV Max mV
SMGS11 Detector >26.5 5 0.10 620 760 7 0503
SMGS21 Mixer >26.5 – 0.15 620 760 7 0503
SMS201 Detector >26.5 1 0.08 60 120 80 0503
SMS202 Detector <18 1 0.18 60 120 80 0503
• GaAs Schottky diode SMGS11 is ideal for temperature compensated detector
• GaAs Schottky diode SMGS21 is an anti-parallel pair, ideal for a doubler and harmonic mixer
• Silicon zero bias Schottky diode SMS201 and SMS202 are simplest for a broadband detector design,
  with good sensitivity, -54 dBm typical and no DC bias required